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CHA3512
RoHS COMPLIANT
6-18GHz Low Noise Digital Variable Amplifier
GaAs Monolithic Microwave IC Description
The CHA3512 is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier. It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
Typical on wafer Measurements Gain versus attenuation states
Main Features
Performances : 6-18GHz 23 dBm saturated output power 16 dB gain 1 bit attenuator for 20dB dynamic range DC power consumption : 210mA @ 4.5V Chip size : 4.27 x 2.46 x 0.1 mm
Main Characteristics
Tamb. = 25 C Symbol
Fop G Psat ATT dyn
Parameter
Operating frequency range Small signal gain @ Attenuator state 0dB Saturated Output power @ Attenuator state 0dB Attenuator range
Min
6
Typ
16 23 20
Max
18
Unit
GHz dB dBm dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. DSCHA35126278 - 05 Oct 06
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3512
6-18GHz Digital Variable Amplifier
Electrical Characteristics on wafer
Tamb = +25 C Vd= Pads B, C = 4.5V, Vg = Pads A, C tuned for Id = 210mA Symbol
Fop G ATT dyn Is
Parameter
Operating frequency range (1) Small signal gain @ Attenuator state 0dB (1) Attenuator range Small signal gain @ Attenuator state 0dB & switch OFF (1) Output power at 1dB compression @ Attenuator state 0dB (1) Saturated Output power @ Attenuator state 0dB (1) Noise figure @ Attenuator state 0dB Input VSWR all attenuator states
Min
6
Typ
Max
18
Unit
GHz dB dB dB
16 20 -35
P1dB
20
dBm
Psat
23
dBm
NF VSWRin
7 2.0:1 2.0:1 4.5 210 -5 250 0
dB
VSWRout Output VSWR all attenuator states & switch ON Vd Id Vc Drain bias DC voltage (Pads B,D) Bias current @ small signal Control voltage for Attenuator bit & SPDT switch
V mA V
(1) These values are representative for on-wafer measurements that are made without bonding wires at the RF ports.
Ref. : DSCHA35126278 - 05 Oct 06
2/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-18GHz Digital Variable Amplifier
CHA3512
Absolute Maximum Ratings
Tamb. = 25 (1) C Symbol
Vd Id Vg Vc Pin Tch Ta Tstg
Parameter
Maximum Drain bias voltage ( Pads B, D) Drain bias current with Vd=4.5V Gate bias voltage (Pads A,C) Attenuator bit & SPDT control voltage Maximum input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range
Values
+5 300 -2 to +0.4 -7 to +0.6 +20.0 +175 -40 to +70 -55 to +125
Unit
V mA V V dBm C C C
(1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Thermal Resistance channel to ground paddle =123 C/W for Tamb. = +70 C.
LNA Control interface
The attenuator state is controlled by 2 voltages. The SPDT switch is controlled by 2 voltages.
state
Theoretical attenuation (dB)
Voltage CONTROL PAD
20A (V) 20B (V)
Switch control
E (V)
F (V)
0 1 2
0 reference 20 Isolation
-5 0 -5
0 -5 0
-5 -5 0
0 0 -5
Ref. : DSCHA35126278 - 05 Oct 06
3/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3512
6-18GHz Digital Variable Amplifier
Typical on wafer Measurements @ 25 C
Bias conditions: Vd=4.5V, Vg tuned for Id = 210mA Linear Gain versus attenuator states
0dB state
20dB state
Linear Gain with SPDT switch OFF
Ref. : DSCHA35126278 - 05 Oct 06
4/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-18GHz Digital Variable Amplifier
Saturated output power @ nominal state
CHA3512
dB(S11) versus frequency for all states
Switch OFF
Attenuator accuracy versus frequency
dB(S22) versus frequency for all states
Ref. : DSCHA35126278 - 05 Oct 06
5/10
Attenuation (dB) Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3512
6-18GHz Digital Variable Amplifier
Typical test fixture Measurements @ 25 C
Bias conditions: Vd=4.5V, Vg tuned for Id = 210mA
Linear Gain versus attenuation states
Switch OFF
Input Return Loss versus attenuation states
Switch OFF
Ref. : DSCHA35126278 - 05 Oct 06
6/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-18GHz Digital Variable Amplifier
CHA3512
Output Return Loss versus attenuation states
Ref. : DSCHA35126278 - 05 Oct 06
7/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3512
6-18GHz Digital Variable Amplifier
Typical Chip on wafer Sij parameters for reference state
Tamb = +25 Vd1 = +4.5 V, Id = 210 mA , 0dB state (20A = -5V, 20B = 0V). C,
Freq (GHz) dB(S11) P(S11) ( dB(S21) P(S21) ( dB(S12) P(S12) ( dB(S22) P(S22) ( ) ) ) ) 1.0 -5.5 -92.5 -20.7 161.9 -62.1 112.2 -0.5 -57.6 1.5 -8.0 -124.4 -2.7 69.1 -66.5 -40.1 -1.2 -85.9 2.0 -11.1 -149.5 0.3 94.1 -68.7 91.4 -1.5 -107.3 2.5 -13.9 -167.5 10.0 50.3 -64.9 14.8 -1.9 -132.8 3.0 -17.9 170.0 13.8 -2.9 -83.1 140.3 -2.8 -157.7 3.5 -25.6 167.5 15.6 -54.8 -87.8 39.6 -4.7 -175.7 4.0 -28.0 -112.8 16.3 -91.9 -73.1 116.8 -6.1 167.0 4.5 -20.8 -106.6 17.1 -127.4 -67.2 82.5 -8.0 152.1 5.0 -17.8 -121.1 17.6 -161.5 -63.8 57.4 -10.0 140.7 5.5 -16.9 -137.3 18.0 165.7 -61.5 22.6 -12.2 132.5 6.0 -17.4 -152.0 18.2 133.9 -60.0 -7.1 -14.5 127.7 6.5 -19.4 -161.4 18.3 103.0 -57.6 -33.7 -16.7 127.0 7.0 -22.7 -156.8 18.3 72.7 -56.5 -63.6 -18.7 129.8 7.5 -23.3 -123.6 18.2 43.1 -55.2 -89.9 -19.7 136.0 8.0 -19.3 -107.8 18.0 14.2 -54.0 -115.4 -20.2 140.3 8.5 -15.6 -107.5 17.8 -13.9 -53.6 -142.5 -21.1 137.2 9.0 -13.3 -118.9 17.5 -41.2 -53.7 -160.6 -21.5 132.1 9.5 -11.7 -131.3 17.3 -68.0 -52.6 -177.3 -22.9 127.6 10.0 -10.5 -147.0 17.1 -94.5 -51.6 153.2 -24.4 126.2 10.5 -10.2 -161.0 16.9 -120.6 -53.2 131.7 -26.5 125.0 11.0 -10.0 -174.3 16.9 -146.6 -53.3 114.2 -28.6 130.5 11.5 -10.1 172.0 16.9 -173.0 -53.7 99.0 -29.8 142.9 12.0 -10.4 157.6 17.0 159.8 -55.4 76.4 -29.7 148.2 12.5 -11.1 142.7 17.0 131.8 -59.3 61.7 -30.1 140.1 13.0 -12.4 125.9 17.0 102.9 -59.3 48.4 -32.0 109.0 13.5 -14.7 112.4 16.8 74.2 -62.4 -22.1 -34.9 37.3 14.0 -17.6 104.1 16.7 45.8 -59.0 -113.2 -29.6 -36.7 14.5 -20.9 107.6 16.6 16.4 -54.6 -169.8 -25.4 -71.4 15.0 -20.5 120.0 16.6 -14.5 -51.5 171.1 -24.5 -93.5 15.5 -18.4 113.6 16.4 -46.8 -48.0 149.4 -25.2 -99.5 16.0 -16.8 92.0 16.1 -80.4 -45.8 126.8 -25.9 -79.2 16.5 -15.7 63.4 15.5 -114.6 -43.8 100.8 -21.5 -60.8 17.0 -14.9 31.3 14.7 -148.5 -43.3 75.6 -15.9 -66.5 17.5 -14.5 2.8 14.0 175.9 -42.6 52.2 -12.2 -84.5 18.0 -13.8 -20.5 12.9 138.1 -42.4 25.5 -9.6 -106.7 18.5 -12.8 -39.8 11.3 98.1 -43.0 -5.1 -8.4 -131.5 19.0 -11.5 -57.4 8.9 59.2 -45.7 -39.8 -8.3 -154.4 19.5 -10.3 -75.6 6.0 23.7 -50.7 -77.9 -8.9 -174.8 20.0 -9.3 -93.4 3.2 -8.9 -60.5 -154.2 -10.2 167.0 20.5 -8.7 -110.5 0.8 -40.4 -57.9 108.5 -12.1 151.2 21.0 -8.4 -127.9 -0.9 -74.3 -50.5 78.2 -15.0 138.3 21.5 -8.4 -144.2 -1.8 -118.3 -47.7 52.1 -21.2 150.9 22.0 -8.6 -159.1 -3.7 176.5 -44.3 19.4 -15.1 -171.3 22.5 -8.9 -175.4 -8.9 108.2 -45.6 -14.4 -12.2 157.4 23.0 -9.5 167.6 -13.6 57.0 -47.3 -35.8 -12.7 134.3 23.5 -10.4 150.2 -16.4 15.7 -49.2 -46.6 -13.9 117.4 24.0 -11.6 130.5 -18.1 -17.7 -52.6 -62.7 -15.2 103.7
Ref. : DSCHA35126278 - 05 Oct 06 8/10 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-18GHz Digital Variable Amplifier
Chip Assembly and Mechanical Data
CHA3512
To Vd DC Drain Supply
RF IN1
RF OUT
RF IN2
Note : RF wire bondings should be as short as possible, lower than 0.35mm. 25m diameter gold wire is to be prefered.
Recommended circuit bonding table
Label
20A, 20B B D A C E, F
Type
Vc Vd Vd Vg Vg Vc
Decoupling
Not required 120pF / 10nF 120pF / 10nF Not required Not required Not required
Comment
20dB attenuator control Drain Supply Drain Supply Gate Supply Gate Supply Switch control
Ref. : DSCHA35126278 - 05 Oct 06
9/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3512
Bonding pad positions
6-18GHz Digital Variable Amplifier
Chip thickness : 100m
Ordering Information
Chip form : CHA3512-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA35126278 - 05 Oct 06 10/10 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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